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SCH2825 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications
Ordering number : ENA1006B
SCH2825
N-Channel Power MOSFET
30V, 1.6A, 180mΩ, Single SCH6 with Schottky Diode
http://onsemi.com
Features
• Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package
facilitating high-density mounting
• [MOSFET] • Low ON-resistance
• Ultrahigh-speed switching
• 4V drive
• [SBD] • Short reverse recovery time
• Low forward voltage
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
[MOSFET]
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
Storage Temperature
Tstg
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
VRRM
VRSM
IO
IFSM
Tj
50Hz sine wave, 1 cycle
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Ratings
Unit
30
V
±20
V
1.6
A
6.4
A
0.6
W
150
°C
--55 to +125
°C
30
V
30
V
0.5
A
3
A
--55 to +125
°C
--55 to +125
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7028-003
1.6
0.2
654
SCH2825-TL-E
0.2
1 23
0.5
1 : Gate
2 : Source
3 : Anode
4 : Cathode
5 : Drain
6 : Drain
SCH6
Product & Package Information
• Package
: SCH6
• JEITA, JEDEC
: SOT-563
• Minimum Packing Quantity : 5,000 pcs./reel
Packing Type : TL
Marking
XA
TL
Electrical Connection
65 4
12 3
Semiconductor Components Industries, LLC, 2013
August, 2013
80713 TKIM TC-00002992/62712TKIM/D1207PE TIIM TC-00001031 No. A1006-1/6