SCH2819 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

SCH2819
Ordering number : ENN8291
SCH2819
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
• _{Composite type with a N-Channel Silicon MOSFET (SCH1419) and a Schottky Barrier Diode (SS0503)}
contained in one package facilitating high-density mounting.
• _[MOSFET]
• _{Low ON-resistance.}
• _{Ultrahigh-speed switching.}
• _{2.5V drive.}
• _[SBD]
• _{Short reverse recovery time.}
• _{Low forward voltage.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : QU
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm²âœ•0.8mm) 1unit
50Hz sine wave, 1 cycle
Ratings
Unit
30
V
±12
V
1.5
A
6
A
0.6
W
150
°C
--55 to +125
°C
30
V
30
V
0.5
A
3
A
--55 to +125
°C
--55 to +125
°C
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn6seImwiw.cwo.omnsemi.com
Publication Order Number:
SCH2819/D