SCH2809 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

SCH2809
Ordering number : ENA0446
SCH2809
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Features
Applications
• _{Composite type with a P-channel sillicon MOSFET (SCH1305) and a Schottky barrier diode (SBS018) contained}
in one package facilitating high-density mounting.
• _[MOSFET]
• _{Low ON-resistance.}
• Ultrahigh-speed switching.
• 1.8V drive.
• _[SBD]
• Short reverse recovery time.
• Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : QJ
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm²âœ•0.8mm) 1unit
50Hz sine wave, 1 cycle
Ratings
Unit
--12
V
±10
V
--1.2
A
--4.8
A
0.6
W
150
°C
--55 to +125
°C
15
V
15
V
0.5
A
3
A
--55 to +125
°C
--55 to +125
°C
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn6seImwiw.cwo.omnsemi.com
Publication Order Number:
SCH2809/D