SCH2408 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

SCH2408
Ordering number : ENA1198
SCH2408
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
• _{1.5V drive.}
• _{Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1%
When mounted on ceramic substrate (900mm²âœ•0.8mm) 1unit
Ratings
Unit
30
V
±10
V
0.35
A
1.4
A
0.6
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : LH
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=100µA
VDS=10V, ID=200mA
ID=200mA, VGS=4V
ID=100mA, VGS=2.5V
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
min
30
0.4
360
Ratings
Unit
typ
max
V
1 µA
±10 µA
1.3
V
600
mS
0.75
1.0
Ω
0.9
1.3
Ω
1.8
3.6
Ω
28
pF
6.0
pF
3.1
pF
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
SCH2408/D