SCH1439 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

SCH1439
Power MOSFET
30V, 72mΩ, 3.5A, Single N-Channel
This low-profile high-power MOSFET is produced using ON
Semiconductor’s trench technology, which is specifically designed to
minimize gate charge and ultra low on resistance. This device is suitable for
applications with low gate charge driving or ultra low on resistance
requirements.
Features
 Low On-Resistance
 4V drive
 ESD Diode-Protected Gate
 Pb-Free, Halogen Free and RoHS compliance
 Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt)
Typical Applications
 Load Switch
 Battery Switch
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
30
V
Gate to Source Voltage
VGSS
20
V
Drain Current (DC)
ID
3.5
A
Drain Current (Pulse)
PW  10s, duty cycle  1%
IDP
14
A
Power Dissipation
When mounted on ceramic substrate
PD
(900mm²  0.8mm)
1
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
55 to +150
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm²  0.8mm)
Symbol
R_JA
Value
Unit
125 C/W
www.onsemi.com
VDSS
30V
RDS(on) Max
72mΩ@ 10V
110mΩ@ 4.5V
128mΩ@ 4V
ID _Max
3.5A
ELECTRICAL CONNECTION
N-Channel
1, 2, 5, 6
1 : Drain
2 : Drain
3
3 : Gate
4 : Source
5 : Drain
6 : Drain
4
PACKING TYPE : TL
MARKING
ZQ
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
September 2015 - Rev. 2
Publication Order Number :
SCH1439/D