SCH1430 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

SCH1430
Power MOSFET
20V, 125mΩ, 2A, Single N-Channel
This low-profile high-power MOSFET is produced using ON
Semiconductor’s trench technology, which is specifically designed to
minimize gate charge and ultra low on resistance. This device is suitable for
applications with low gate charge driving or ultra low on resistance
requirements.
Features
• Low On-Resistance
• 1.8V drive
• ESD Diode-Protected Gate
• Pb-Free, Halogen Free and RoHS compliance
• Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt)
Typical Applications
• Load Switch
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
20
V
Gate to Source Voltage
VGSS
±12
V
Drain Current (DC)
ID
2
A
Drain Current (Pulse)
PW ≤ 10μs, duty cycle ≤ 1%
IDP
8
A
Power Dissipation
When mounted on ceramic substrate
PD
(900mm² × 0.8mm)
0.8
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm² × 0.8mm)
Symbol
R_θJA
Value
Unit
156.2 °C/W
www.onsemi.com
VDSS
20V
RDS(on) Max
125mΩ@ 4.5V
190mΩ@ 2.5V
310mΩ@ 1.8V
ID _Max
2A
ELECTRICAL CONNECTION
N-Channel
1, 2, 5, 6
1 : Drain
2 : Drain
3
3 : Gate
4 : Source
5 : Drain
6 : Drain
4
PACKING TYPE : TL
MARKING
ZF
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
August 2015 - Rev. 2
Publication Order Number :
SCH1430/D