SCH1406 Datasheet, PDF (1/4 Pages) ON Semiconductor – General-Purpose Switching Device Applications

SCH1406
Ordering number : EN7749A
SCH1406
Features
• Low ON-resistance.
• Ultrahigh-speed switching.
• 1.8V drive.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm²âœ•0.8mm)
Ratings
Unit
20
V
±10
V
1.7
A
4.8
A
0.8
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : KF
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
RDS(on)3
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=4V
ID=0.5A, VGS=2.5V
ID=0.1A, VGS=1.8V
min
20
0.4
1.9
Ratings
Unit
typ
max
V
1 µA
±10 µA
1.3
V
2.8
S
160
210 mΩ
200
280 mΩ
280
390 mΩ
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
SCH1406/D