SCH1335 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

Ordering number : ENA1939A
SCH1335
P-Channel Power MOSFET
–12V, –2.5A, _{112mΩ, Single SCH6}
http://onsemi.com
Features
• _{1.8V drive}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm)
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Ratings
Unit
--12
V
±10
V
--2.5
A
--10
A
0.8
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7028-002
1.6
0.2
654
SCH1335-TL-H
0.2
Product & Package Information
• Package
: SCH6
• JEITA, JEDEC
: SOT-563
• Minimum Packing Quantity : 5,000 pcs./reel
Packing Type : TL
Marking
YL
1 23
0.5
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
TL
Electrical Connection
1, 2, 5, 6
SCH6
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
62712 TKIM/33011PE TKIM TC-00002321 No. A1939-1/7