SCH1330-TL-H Datasheet, PDF (1/7 Pages) ON Semiconductor – P-Channel Power MOSFET 20V, –1.5A, 241m, Single SCH6

Ordering number : ENA1460B
SCH1330
P-Channel Power MOSFET
–20V, –1.5A, _{241mΩ, Single SCH6}
http://onsemi.com
Features
• _{Low ON-resistance}
• _{Ultrahigh-speed switching}
• _{1.8V drive}
• _{Halogen free compliance}
• _{Protection diode in}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm)
Ratings
Unit
--20
V
±10
V
--1.5
A
--6
A
1
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7028-002
1.6
0.2
654
SCH1330-TL-H
0.2
Product & Package Information
• Package
: SCH6
• JEITA, JEDEC
: SOT-563
• Minimum Packing Quantity : 5,000 pcs./reel
Packing Type : TL
Marking
YF
1 23
0.5
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
TL
Electrical Connection
1, 2, 5, 6
SCH6
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
62712TKIM/O1409 TKIM/42809PE MSIM TC-00001930 No. A1460-1/7