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SBS818 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – Low VF Schottky Barrier Diode 30V, 2.0A Rectifier
Ordering number : ENA0471A
SBS818
Schottky Barrier Diode
30V, 2A, Low VF, Non-Monolithic Dual EMH8 Common Cathode
http://onsemi.com
Applications
• High frequency rectification (switching regulators, converters, choppers)
Features
• Low switching noise
• Low forward voltage (IF=2.0A, VF max=0.52V)
• Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm)
Specifications
Absolute Maximum Ratings at Ta=25°C (Value per element)
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Symbol
VRRM
VRSM
Average Output Current
IO
Surge Forward Current
Junction Temperature
Storage Temperature
IFSM
Tj
Tstg
Conditions
When mounted on ceramic substrate (900mm2×0.8mm)
When mounted on glass epoxy substrate (0.96mm2×0.03mm)
50Hz sine wave, 1 cycle
Ratings
Unit
30
V
30
V
2.0
A
1.5
A
20
A
--55 to +125
°C
--55 to +125
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7045-004
0.2
8
5
0.125 SBS818-TL-E
Product & Package Information
• Package
: EMH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
1
4
0.5
2.0
1 : Anode1
2 : NC
3 : Anode2
4 : Anode2(NC)
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
EMH8
SD
TL
Lot No.
Electrical Connection
8765
1234
*: Terminal 4 is used for the
purposes such as test. Al-
though it is connected to
Anode 2, please handle it
as NC Terminal.
Semiconductor Components Industries, LLC, 2013
September, 2013
91912 TKIM TC-00002809/51408SB TIIM TC-00001363 No. A0471-1/6