SBRC560TR Datasheet, PDF (1/4 Pages) ON Semiconductor – Schottky Power Rectifier

SBRC560TR
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes.
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MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage DC
Blocking Voltage
Average Rectified Forward Current
V_RRM
60
V
V_RWM
V_R
I_F(AV)
3.0 @ T_L =
A
137°C
4.0 @ T_L =
127°C
Nonrepetitive Peak Surge Cur-
I_FSM
A
rent (Surge applied at rated load con-
125
ditions halfwave, single phase, 60 Hz)
Storage Temperature Range
Operating Junction Temperature
(Note 1)
T_stg
−65 to +175 °C
T_J
−65 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP_D/dT_J < 1/R_qJA.
SCHOTTKY BARRIER
RECTIFER
5 A, 60 V
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
November, 2014 − Rev. 0
Publication Order Number:
SBRC560TR/D