SBE813 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – Low IR Schottky Barrier Diode 30V, 3.0A Rectifier

Ordering number : EN8967A
SBE813
Schottky Barrier Diode
30V, 3A, Low IR, Non-Monolithic Dual VEC8 Common Cathode
http://onsemi.com
Applications
• _{High frequency rectification (switching regulators, converters, choppers)}
Features
• _{Small switching noise}
• _{Low leakage current and high reliability due to highly reliable planar structure}
• _{Ultrasmall package permitting applied sets to be small and slim}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
I_O
I_FSM
Tj
Tstg
Conditions
50Hz sine wave, 1 cycle
Ratings
Unit
30
V
35
V
3.0
A
20
A
--55 to +125
°C
--55 to +125
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7012-001
0.3
8 7 65
0.15 _SBE813-TL-E
Product & Package Information
• Package
: VEC8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
1234
0.65
2.9
1 : Anode1
2 : No Contact
3 : Anode2
4 : No Contact
5 : Cathode2
6 : Cathode2
7 : Cathode1
8 : Cathode1
VEC8
SE
LOT No.
TL
Electrical Connection
8765
1234
Semiconductor Components Industries, LLC, 2013
September, 2013
90512 TKIM/32406SB MSIM TB-00002132 No.8967-1/6