SBE807-TL-E Datasheet, PDF (1/3 Pages) ON Semiconductor – High frequency rectification (switching regulators, converters, and choppers)

Ordering number : ENA1055
SBE807
SANYO Semiconductors
DATA SHEET
SBE807 ^{Schottky Barrier Diode}
30V, 1.0A Rectifier
Applications
• _{High frequency rectification (switching regulators, converters, and choppers).}
Features
• _{Low switching noise.}
• Low reverse current (VR=16V, IR max=15μA).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
50Hz sine wave, 1 cycle
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Marking : SJ
Symbol
VR
VF1
VF2
IR
C
trr
Rth(j-a)
Conditions
IR=0.2mA
IF=0.7A
IF=1.0A
VR=16V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
When mounted on ceramic substrate (900mm²âœ•0.8mm)
Ratings
Unit
30
V
35
V
1.0
A
10
A
--55 to +125
°C
--55 to +125
°C
min
30
Ratings
typ
0.45
0.48
27
111
max
0.50
0.53
15
10
Unit
V
V
V
μA
pF
ns
°C / W
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the performance, characteristics, and functions of the described products in the independent state, and are not
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device, the customer should always evaluate and test devices mounted in the customer's products or
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22708SB TI IM TC-00001249 No. A1055-1/3