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SBC847AWT1G Datasheet, PDF (1/13 Pages) ON Semiconductor – General Purpose Transistors
BC846, SBC846, BC847,
SBC847, BC848 Series
General Purpose
Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 which is
designed for low power surface mount applications.
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector-Emitter Voltage
VCEO
V
BC846, SBC846
65
BC847, SBC847
45
BC848
30
Collector-Base Voltage
VCBO
V
BC846, SBC846
80
BC847, SBC847
50
BC848
30
Emitter-Base Voltage
VEBO
V
BC846, SBC846
6.0
BC847, SBC847
6.0
BC848
5.0
Collector Current − Continuous
IC
100
mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
PD
RqJA
TJ, Tstg
200
620
−55 to
+150
mW
°C/W
°C
1. FR−5 = 1.0 x 0.75 x 0.062 in.
3
1
2
SC−70/SOT−323
CASE 419
STYLE 3
MARKING DIAGRAM
XX MG
G
XX
= Specific Device Code
M
= Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 12 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
January, 2015 − Rev. 11
Publication Order Number:
BC846AWT1/D