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SBAS16HT1G Datasheet, PDF (1/4 Pages) ON Semiconductor – Switching Diode
BAS16H, SBAS16H
Switching Diode
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value Unit
Continuous Reverse Voltage
Peak Forward Current
Non−Repetitive Peak Forward Surge
Current, 60 Hz
VR
100
IF
200
IFSM(surge)
500
Vdc
mAdc
mAdc
Non−Repetitive Peak Forward Current
(Square Wave, TJ = 25°C prior to
surge)
t = 1 ms
t = 10 ms
t = 100 ms
t = 1 ms
t=1s
IFSM
A
36.0
18.0
6.0
3.0
0.7
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Total Device Dissipation FR-5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD
200
mW
1.57 mW/°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
RqJA
TJ, Tstg
635
−55 to
150
°C/W
°C
1. FR-4 Minimum Pad.
http://onsemi.com
1
CATHODE
2
ANODE
2
1
SOD−323
CASE 477
STYLE 1
MARKING DIAGRAM
A6 M
A6 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
BAS16HT1G
SOD−323 3000 / Tape & Reel
(Pb−Free)
SBAS16HT1G SOD−323 3000 /T ape & Reel
(Pb−Free)
SBAS16HT3G SOD−323 10000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
June, 2013 − Rev. 10
Publication Order Number:
BAS16HT1/D