SB10-05P Datasheet, PDF (1/4 Pages) ON Semiconductor – Schottky Barrier Diode

SB10-05P
Schottky Barrier Diode
50V, 1A, Low IR, Single
www.onsemi.com
Applications
• High Frequency Rectification (Switching Regulators, Converters, Choppers)
Features
• Low Forward Voltage (V_F max=0.55V)
• Short Reverse Recovery Time (trr max=10ns)
• Low Switching Noise
• Low Leakage Current and High Reliability Due to Reliable Planar Structure
• Pb-Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Conditions
Repetitive Peak Reverse Voltage
VRRM
Non-repetitive Peak Reverse Surge Voltage VRSM
Average Output Current
Surge Forward Current
Junction Temperature
IO
IFSM
Tj
50Hz sine wave, 1 cycle
Storage Temperature
Tstg
Value
Unit
50
V
55
V
1
A
10
A
−55 to +125
°C
−55 to +125
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Electrical Characteristics at Ta = 25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
Conditions
VR
VF
IR
C
trr
Rthj-a (1)
Rthj-a (2)
IR=300μA
VF=1A
VR=25V
VR=10V, f=1MHz
IF= IR=100mA, See specification Test Circuit
Mounted on a ceramic board (250mm²x0.8mm)
min
50
Value
typ
52
300
110
max
0.55
80
10
Unit
V
V
μA
pF
ns
°C / W
°C / W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Packing Type : TD
Marking
Electrical Connection
1 : Anode
2 : Cathode
3 : No Contact
TD
SOT-89 / PCP-1
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
February 2015 - Rev. 1
Publication Order Number :
SB10-05P/D