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RD0506T Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – Diffused Junction Silicon Diode Low VF - High-Speed Switching Diode
Ordering number : ENA1574B
RD0506T
Planar Ultrafast Rectifier
Fast trr type, 5A, 600V, 50ns, TP/TP-FA
http://onsemi.com
Features
• High breakdown voltage (VRRM=600V)
• Low noise at the time of reverse recovery
• Halogen free compliance
• Fast reverse recovery time
• Low forward voltage (VF max=1.6V)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
IO
IFSM
Tj
Tstg
Conditions
Sine wave 10ms, 1 cycle
Ratings
Unit
600
V
5
A
80
A
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions unit : mm (typ)
7518-002
Package Dimensions unit : mm (typ)
7003-001
6.5
2.3
6.5
5.0
0.5 RD0506T-H
5.0
4
4
2.3
0.5
RD0506T-TL-H
0.85
0.7
0.6
123
2.3 2.3
1.2
0.5
1 : No Contact
2 : Cathode
3 : Anode
4 : Cathode
TP
0.85
123
0.6
2.3 2.3
0.5
0 to 0.2
1.2
1 : No Contact
2 : Cathode
3 : Anode
4 : Cathode
TP-FA
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
Marking
(TP, TP-FA)
R0506
Packing Type (TP-FA) : TL
Electrical Connection
4
LOT No.
TL
12 3
Semiconductor Components Industries, LLC, 2013
September, 2013
91212 TKIM/N0409SC TKIM TC-00002160 No. A1574-1/7