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RB751V40T1G Datasheet, PDF (1/4 Pages) ON Semiconductor – Schottky Barrier Diode
RB751V40T1G
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
 Extremely Fast Switching Speed
 Extremely Low Forward Voltage -- 0.28 Volts (Typ) @ IF = 1 mAdc
 Low Reverse Current
 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
40 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Peak Reverse Voltage
Reverse Voltage
Forward Continuous Current (DC)
Peak Forward Surge Current
Electrostatic Discharge
VRM
VR
IF
IFSM
ESD
40
V
30
Vdc
30
mA
500
mA
HBM Class: 1C
MM Class: A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR--5 Board,
PD
(Note 1) TA = 25C
Derate above 25C
200
mW
1.57
mW/C
Thermal Resistance
Junction--to--Ambient
RθJA
635
C/W
Junction and Storage
Temperature Range
TJ, Tstg
--55 to
C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR--5 Minimum Pad
2
1
SOD--323
CASE 477
STYLE 1
MARKING DIAGRAM
5E MG
G
5E = Specific Device Code
M = Date Code
G = Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
RB751V40T1G SOD--323 3000/Tape & Reel
(Pb--Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
 Semiconductor Components Industries, LLC, 2010
1
October, 2010 -- Rev. 4
Publication Order Number:
RB751V40T1/D