PZTA42T1 Datasheet, PDF (1/6 Pages) Motorola, Inc – HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by PZTA42T1/D
High Voltage Transistor
Surface Mount
NPN Silicon
COLLECTOR 2,4
BASE
1
EMITTER 3
PZTA42T1
Motorola Preferred Device
SOT–223 PACKAGE
NPN SILICON
HIGH VOLTAGE
TRANSISTOR
SURFACE MOUNT
MAXIMUM RATINGS
4
Rating
Symbol
Value
Unit
Collector-Emitter Voltage (Open Base)
Collector-Base Voltage (Open Emitter)
Emitter-Base Voltage (Open Collector)
Collector Current (DC)
Total Power Dissipation @ TA = 25°C(1)
Storage Temperature Range
Junction Temperature
DEVICE MARKING
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
300
300
6.0
500
1.5
– 65 to +150
150
Vdc
Vdc
Vdc
mAdc
Watts
°C
°C
1
2
3
CASE 318E-04, STYLE 1
TO-261AA
P1D
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction-to-Ambient(1)
R_θJA
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
300
—
Vdc
Collector-Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
V(BR)CBO
300
—
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 µAdc, IC = 0)
V(BR)EBO
6.0
—
Vdc
Collector-Base Cutoff Current
(VCB = 200 Vdc, IE = 0)
ICBO
—
0.1
µAdc
Emitter-Base Cutoff Current
(VBE = 6.0 Vdc, IC = 0)
IEBO
—
0.1
µAdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min 0.93 in2.
2. Pulse Test Conditions, tp = 300 µs, δ = 0.02.
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a trademark of the Bergquist Company
REV 3
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