PZT3904T1 Datasheet, PDF (1/8 Pages) ON Semiconductor – General Purpose Transistor

PZT3904T1
Preferred Device
General Purpose Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
V_CEO
V_CBO
V_EBO
I_C
40
Vdc
60
Vdc
6.0
Vdc
200 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation (Note 1)
T_A = 25°C
Thermal Resistance Junction−to−Ambient
(Note 1)
P_D
R_qJA
1.5
W
12 mW/°C
83.3 °C/W
Thermal Resistance Junction−to−Lead #4
R_qJA
35
°C/W
Junction and Storage Temperature Range
T_J, T_stg − 55 to
°C
+150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 with 1 oz and 713 mm² of copper area.
http://onsemi.com
COLLECTOR
2, 4
1
BASE
3
EMITTER
MARKING
DIAGRAM
SOT−223
CASE 318E
Style 1
AWW
1AM
1AM = Specific Device Code
A = Assembly Location
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping^†
PZT3904T1 SOT−223 1000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
May, 2004 − Rev. 1
Publication Order Number:
PZT3904T1/D