PN2907A Datasheet, PDF (1/6 Pages) NXP Semiconductors – PNP switching transistor

PN2907A
Preferred Device
General Purpose Transistor
PNP Silicon
Features
•ăThese are Pb-Free Devices*
MAXIMUM RATINGS
Rating
Collectorā-āEmitter Voltage
Collectorā-āBase Voltage
Emitterā-āBase Voltage
Collector Current - Continuous
Total Device Dissipation @ T_A = 25°C
Derate above 25°C
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_D
Value
-60
-60
-5.0
-600
625
5.0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ T_C = 25°C
P_D
1.5
W
Derate above 25°C
12
mW/°C
Operating and Storage Junction
Temperature Range
T_J, T_stg - ā55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction- to- Ambient R_qJA
200
°C/W
Thermal Resistance, Junction-to-Case
R_qJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO-92
CASE 29
STYLE 1
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
PN2
907A
YWWĂG
G
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©Ă Semiconductor Components Industries, LLC, 2007
1
May, 2007 - Rev. 3
PN2907A
Y
WW
G
= Device Code
= Year
= Work Week
= Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
PN2907A/D