PCP1405 Datasheet, PDF (1/5 Pages) ON Semiconductor – Single N-Channel Power MOSFET

Ordering number : ENA2326A
PCP1405
Power MOSFET
250V, 6.5Ω, 0.6A, Single N-Channel
http://onsemi.com
Features
 On-resistance RDS(on)1=5Ω (typ)
 2.5V drive
 Protection diode in
 Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
Drain to Gate Voltage
Gate to Drain Voltage
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
VDSS
VGSS
VDGS
VGDS
ID
IDP
PD
PW10s, duty cycle1%
Tc=25C
When mounted on ceramic substrate (600mm²ï‚´0.8mm)
Junction Temperature
Tj
Storage Temperature
Tstg
Value
Unit
250
V
10
V
250
V
10
V
0.6
A
2.4
A
3.5
W
1.3
W
150
C
- 55 to +150
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Case Steady State
Junction to Ambient
When mounted on ceramic substrate (600mm²ï‚´0.8mm)
Symbol
R_JC
R_JA
Value
35.7
96.1
Unit
C/W
Electrical Characteristics at Ta  25C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
Conditions
ID=1mA, VGS=0V
VDS=250V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=0.3A
min
250
0.4
Value
Unit
typ
max
V
1 A
10 A
1.3 V
1.4
S
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
July, 2014
72414HK TC-00003120/41514TKIM PA No.A2326-1/5