PCP1402 Datasheet, PDF (1/5 Pages) ON Semiconductor – Single N-Channel Power MOSFET

Ordering number : ENA2303A
PCP1402
Power MOSFET
250V, 2.4Ω, 1.2A, Single N-Channel
http://onsemi.com
Features
 On-resistance RDS(on)=1.8Ω (typ)
 Input Capacitance Ciss=210pF (typ)
 Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
VDSS
VGSS
ID
IDP
PD
PW10s, duty cycle1%
Tc=25C
When mounted on ceramic substrate (600mm²ï‚´0.8mm)
Junction Temperature
Tj
Storage Temperature
Tstg
Value
Unit
250
V
30
V
1.2
A
4.8
A
3.5
W
1.5
W
150
C
55 to +150
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Case Steady State
Junction to Ambient
When mounted on ceramic substrate (600mm²ï‚´0.8mm)
Symbol
R_JC
R_JA
Value
35.7
83.3
Unit
C /W
C /W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Electrical Characteristics at Ta  25C
Parameter
Symbol
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
Conditions
ID=1mA, VGS=0V
VDS=250V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=600mA
min
250
2.5
Value
Unit
typ
max
V
1 A
10 A
3.5 V
1.2
S
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
September, 2014
90914HK TC-00003146/52614TKIM No.A2303-1/5