PCP1302 Datasheet, PDF (1/5 Pages) ON Semiconductor – P-Channel Power MOSFET

Ordering number : ENA2227
PCP1302
P-Channel Power MOSFET
−60V, −3A, 266mΩ, Single PCP
http://onsemi.com
Features
• On-resistance RDS(on)1=200mΩ(typ.)
• 4V drive
• Halogen free compliance
• Protection Diode in
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Conditions
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
ID
IDP
PW≤10μs, duty cycle≤1%
Tc=25°C
PD
When mounted on ceramic substrate (600mm²Ã—0.8mm)
Junction Temperature
Tj
Storage Temperature
Tstg
Value
Unit
−60
V
±20
V
−3
A
−12
A
3.5
W
1.3
W
150
°C
− 55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Case Steady State
Junction to Ambient
When mounted on ceramic substrate (600mm²Ã—0.8mm)
Symbol
R_θJC
R_θJA
Value
35.7
96.1
Unit
°C /W
°C /W
Electrical Characteristics at Ta = 25°C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
Conditions
ID=−1mA, VGS=0V
VDS=−60V, VGS=0V
VGS=±20V, VDS=0V
VDS=−10V, ID=−1mA
VDS=−10V, ID=−1.5A
ID=−1.5A, VGS=−10V
ID=−1A, VGS=−4.5V
ID=−1A, VGS=−4V
VDS=−20V, f=1MHz
min
−60
−1.2
Value
Unit
typ
max
V
−1 μA
±10 μA
−2.6 V
3.2
S
200
266 mΩ
245
334 mΩ
260
374 mΩ
262
pF
29
pF
19
pF
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
June, 2014
61614 TKIM TC-00003133 No. A2227-1/5