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P2N2907AG Datasheet, PDF (1/6 Pages) ON Semiconductor – Amplifier Transistor
P2N2907A
Amplifier Transistor
PNP Silicon
Features
• These are Pb--Free Devices*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector--Emitter Voltage
Collector--Base Voltage
Emitter--Base Voltage
Collector Current -- Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
--60
--60
--5.0
--600
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
PD
1.5
W
Derate above 25°C
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
--55 to
°C
+150
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction to Ambient RθJA
200
°C/W
Thermal Resistance, Junction to Case
RθJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
TO--92
CASE 29
STYLE 17
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
P2N2
907A
AYWW G
G
*For additional information on our Pb--Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
1
April, 2007 -- Rev. 6
A = Assembly Location
Y = Year
WW = Work Week
G = Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
P2N2907AG
TO--92 5000 Units / Bulk
(Pb--Free)
P2N2907ARL1G TO--92 2000 / Tape & Reel
(Pb--Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
P2N2907A/D