P2N2907A Datasheet, PDF (1/6 Pages) Motorola, Inc – Amplifier Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by P2N2907A/D
Amplifier Transistor
PNP Silicon
COLLECTOR
1
2
BASE
P2N2907A
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
–60
–60
–5.0
–600
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watts
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
200
Thermal Resistance, Junction to Case
R_qJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = –10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0)
(VCB = –50 Vdc, IE = 0, TA = 150°C)
Emitter Cutoff Current
(VEB = –3.0 Vdc)
Collector Cutoff Current
(VCE = –10 V)
Base Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
v v 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Symbol
Min
Max
Unit
V(BR)CEO –60
V(BR)CBO –60
V(BR)EBO –5.0
ICEX
—
ICBO
—
—
IEBO
—
ICEO
—
IBEX
—
—
—
—
–50
–0.01
–10
–10
–10
–50
Vdc
Vdc
Vdc
nAdc
µAdc
nAdc
nAdc
nAdc
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1