NZF220TT1G Datasheet, PDF (1/4 Pages) ON Semiconductor – EMI Filter with ESD Protection

NZF220TT1
EMI Filter with ESD
Protection
Features:
• EMI/RFI Bi−directional “Pi” Low−Pass Filters
• ESD Protection Meets IEC61000−4−2
• Diode Capacitance: 7 − 10 pF
• Zener/Resistor Line Capacitance: 22 ± 20% pF
• Low Zener Diode Leakage: 1 mA Maximum
• Zener Breakdown Voltage; 6 − 8 Volts
• Pb−Free Package is Available
Benefits:
• Designed to Suppress EMI/RFI Noise in Systems Subjected to
Electromagnetic Interference
• Small Package Size Minimizes Parasitic Inductance, Thus a More
“Ideal” Low Pass Filtering Response
Applications:
• Cellular Phones
• Communication Systems
• Computers
• Portable Products with Input/Output Conductors
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Peak Power Dissipation (Note 1)
8 × 20 ms Pulse
P_PK
14
W
Maximum Junction Temperature
T_J
150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. All diodes under power
http://onsemi.com
CIRCUIT DESCRIPTION
1
2
3
3
12
SC−75
CASE 463
STYLE 4
MARKING
DIAGRAM
X6 M G
G
1
X6
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
NZF220TT1
SC−75 3000/Tape & Reel
NZF220TT1G SC−75 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 3
Publication Order Number:
NZF220TT1/D