NYE08-10B6TG Datasheet, PDF (1/7 Pages) ON Semiconductor – Silicon Bidirectional Thyristor

NYE08-10B6TG
Protected TRIAC
Silicon Bidirectional Thyristor
Designed for use in solid state relays, MPU interface, TTL logic and
any other light industrial or consumer application. Supplied in an
inexpensive TO−92 package which is readily adaptable for use in
automatic insertion equipment.
Features
• One−Piece, Injection−Molded Package
• Blocking Voltage to 600 V
• Sensitive Gate Triggering in Two Trigger Modes (Quadrants)
• Improved Noise Immunity (dv/dt Minimum of 500 V/msec at 125°C)
• Compliant with IEC6100−4−5
• High Surge Current of 8 A
• These are Pb−Free Devices
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PROTECTED TRIAC
0.8 AMPERE RMS
600 VOLTS
OUT
COM
G
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage (Note 1) V_DRM,
600
V
(Sine Wave, 50 to 60 Hz, Gate Open,
V_RRM
T_J = 25 to 125°C)
On−State Current RMS (T_C = 80°C)
I_T(RMS)
0.8
A
(Full Sine Wave 50 to 60 Hz)
Peak Non−repetitive Surge Current (One
Full Cycle Sine Wave, 60 Hz, T_C = 25°C)
Circuit Fusing Considerations
(Pulse Width = 8.3 ms)
I_TSM
I²t
8.0
A
0.4
A²s
Peak Gate Power
(T_C = 80°C, Pulse Width v 1.0 ms)
Average Gate Power
(T_C = 80°C, t = 8.3 ms)
Non−Repetitive Line Peak Voltage
(IEC6100−4−5)
P_GM
5.0
W
P_G(AV)
0.1
W
V_PP
2.0
kV
Critical Rate of Rise of All−State Current
di/dt
(I_G = 2 x I_GT, t_r < 100 ms, T_J = 125°C)
100
A/ms
Operating Junction Temperature Range
T_J
−40 to +125 °C
Storage Temperature Range
T_stg −40 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V_DRM and V_RRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
TO−92 (TO−226AA)
CASE 029−11
MARKING DIAGRAM
E08
10B6
YWW G
G
1 23
x
= 3,7,9
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
1
OUT
2
Gate
3
COM
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
November, 2012− Rev. 0
Publication Order Number:
NYE08−10B6/D