NYC222STT1G Datasheet, PDF (1/5 Pages) ON Semiconductor – Sensitive Gate Silicon Controlled Rectifiers

NYC222STT1G,
NYC226STT1G,
NYC228STT1G
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed and tested for repetitive peak operation required for CD
ignition, fuel ignitors, flash circuits, motor controls and low-power
switching applications.
Features
• Blocking Voltage to 600 V
• High Surge Current − 15 A
• Very Low Forward “On” Voltage at High Current
• Low-Cost Surface Mount SOT−223 Package
• These are Pb−Free Devices
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1) V_DRM,
V
(R_GK = IK, T_J = *40 to +110°C, Sine Wave, V_RRM
50 to 60 Hz, Gate Open)
NYC222
50
NYC226
400
NYC228
600
On-State Current RMS
(180° Conduction Angles, T_C = 80°C)
I_T(RMS)
1.5
A
Peak Non-repetitive Surge Current,
@T_A = 25°C, (1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations (t = 8.3 ms)
I_TSM
I²t
15
A
0.9
A²s
Forward Peak Gate Power
(Pulse Width ≤ 1.0 msec, T_A = 25°C)
P_GM
0.5
W
Forward Average Gate Power
(t = 8.3 msec, T_A = 25°C)
P_G(AV)
0.1
W
Forward Peak Gate Current
(Pulse Width ≤ 1.0 ms, T_A = 25°C)
I_FGM
0.2
A
Reverse Peak Gate Voltage
(Pulse Width ≤ 1.0 ms, T_A = 25°C)
V_RGM
5.0
V
Operating Junction Temperature Range
@ Rated V_RRM and V_DRM
T_J −40 to +110 °C
Storage Temperature Range
T_stg
−40 to
°C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V_DRM and V_RRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
SCRs
1.5 AMPERES RMS
400 thru 600 VOLTS
G
A
K
MARKING
DIAGRAM
SOT−223
CASE 318E
STYLE 11
AYW
XXXXXG
G
1
A
= Assembly Location
Y
= Year
W
= Work Week
XXXXX = Device Code
G
= Pb−Free Package
(Note: Microdot may be in either loca-
tion)
PIN ASSIGNMENT
1
K (Cathode)
2
A (Anode)
3
G (Gate)
4
A (Anode)
ORDERING INFORMATION
Device
NYC222STT1G
Package
SOT−223
(Pb−Free)
Shipping^†
1000 /Tape & Reel
NYC226STT1G SOT−223 1000 /Tape & Reel
(Pb−Free)
NYC228STT1G SOT−223 1000 /Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
1
July, 2008 − Rev. 0
Publication Order Number:
NYC222/D