NYC0102BLT1G Datasheet, PDF (1/5 Pages) ON Semiconductor – Sensitive Gate Silicon Controlled Rectifiers

NYC0102BLT1G
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed and tested for highly−sensitive triggering in low-power
switching applications.
Features
• High dv/dt
• Gating Current < 200 mA
• Miniature SOT−23 Package for High Density PCB
• This is a Halogen−Free Device
• This is a Pb−Free Device
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage (Note 1) V_DRM,
V
(R_GK = IK, T_J = *40 to +110°C, Sine
V_RRM
Wave, 50 to 60 Hz
200
On-State Current RMS
(180° Conduction Angle, T_C = 80°C)
I_T(RMS)
0.25
A
Peak Non-repetitive Surge Current,
I_TSM
7.0
A
T_A = 25°C, (1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations (t = 8.3 ms)
I²t
0.2
A²s
Forward Peak Gate Power
(Pulse Width ≤ 1.0 msec, T_A = 25°C)
P_GM
0.1
W
Forward Average Gate Power
(t = 8.3 msec, T_A = 25°C)
P_G(AV)
0.02
W
Forward Peak Gate Current
(Pulse Width ≤ 20 ms, T_A = 25°C)
I_FGM
0.5
A
Reverse Peak Gate Voltage
(Pulse Width ≤ 1.0 ms, T_A = 25°C)
V_RGM
8.0
V
Operating Junction Temperature Range
@ Rated V_RRM and V_DRM
T_J
−40 to
°C
+125
Storage Temperature Range
T_stg
−40 to
°C
+150
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Total Device Dissipation FR− 5 Board
T_A = 25°C
P_D
225
mW
Thermal Resistance, Junction−to−Ambient R_qJA
380
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V_DRM and V_RRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
0.25 AMP, 200 VOLT SCRs
G
A
K
3
1
2
SOT−23
CASE 318
STYLE 8
MARKING
DIAGRAM
C2B MG
G
1
C2B = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary de-
pending upon manufacturing location.
PIN ASSIGNMENT
1
Cathode
2
Gate
3
Anode
ORDERING INFORMATION
Device
Package
Shipping^†
NYC0102BLT1G SOT−23 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
1
December, 2008 − Rev. 0
Publication Order Number:
NYC0102BL/D