NYC008-6JG Datasheet, PDF (1/7 Pages) ON Semiconductor – Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

NYC008-6JG
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume, line-powered consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-226AA package which is
readily adaptable for use in automatic insertion equipment.
Features
• Sensitive Gate Allows Triggering by Microcontrollers and Other
Logic Circuits
• Blocking Voltage to 600 V
• On−State Current Rating of 0.8 A RMS at 80°C
• High Surge Current Capability − 10 A
• Minimum and Maximum Values of IGT, VGT and IH Specified
for Ease of Design
• Immunity to dV/dt − 50 V/msec Minimum at 110°C
• Glass-Passivated Surface for Reliability and Uniformity
• These are Pb−Free Devices
http://onsemi.com
SCRs
0.8 A RMS
600 V
G
A
K
TO−92
CASE 29
STYLE 10
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
NYC
008−6
AYWWG
G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
PIN ASSIGNMENT
1
Cathode
2
Gate
3
Anode
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
January, 2010 − Rev. 0
Publication Order Number:
NYC008−6JG/D