NXH80T120L2Q0PG Datasheet, PDF (1/15 Pages) ON Semiconductor – T-Type, Neutral Point Clamp Module

NXH80T120L2Q0PG,
NXH80T120L2Q0SG
T-Type, Neutral Point
Clamp Module
This high−density, integrated power module combines
high−performance IGBTs with rugged anti−parallel diodes for sine
wave inverter applications.
Features
• Extremely Efficient Trench IGBT with Fieldstop Technology
• Module Design Offers High Power Density
• Low Inductive Layout
• Q0PACK Package with Press−Fit Pins
Typical Applications
• Solar Inverters
• Uninterruptable Power Supplies
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol Value Unit
BRIDGE IGBT
Collector−emitter voltage
V_CES
1200
V
Collector current
T_h = 80°C
I_C
65
A
Pulsed Collector Current, T_pulse Limited
I_CM
260
A
by T_jmax
Gate−emitter voltage
V_GE
±20
V
Power Dissapation per IGBT
T_j = T_jmax
T_h = 80°C
P_total
146
W
Short Circuit Withstand Time
T_SC
10
ms
V_GE = 15 V, V_CE = 600 V, T_J ≤ 150°C
NEUTRAL POINT IGBT
Collector−emitter voltage (Bridge)
V_CES
600
V
Collector current
@ T_h = 80°C
I_C
59
A
Pulsed Collector Current, T_pulse Limited
I_CM
235
A
by T_jmax
Gate−emitter voltage
V_GE
±20
V
Power Dissapation per IGBT
P_total
66
W
T_j = T_jmax
T_h = 80°C
Short Circuit Withstand Time
T_SC
V_GE = 15 V, V_CE = 400 V, T_J ≤ 150°C
5
ms
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
80 A, 1200 V (Bridge)
50 A, 600 V (Neutral Point Clamp)
T – Type Neutral Point Clamp
Q0PACK
CASE 180AA
Q0PACK
CASE 180AB
SCHEMATIC
20 L11 19
T
L7
5,14
15,16
17
L2
18
L8
7 6 13 12
L3
L4
3,4
2
L1
1
L6
8,9
10,11
L5
MARKING DIAGRAM
XXXXXXXXXXXXXXXX
YYWW
YYWW = Year and Work Week Code
ORDERING INFORMATION
See detailed ordering and shipping information in the
dimensions section on page 13 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
October, 2015 − Rev. 1
Publication Order Number:
NXH80T120L2Q0/D