NVTFS5C466NL Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET

NVTFS5C466NL
Power MOSFET
40 V, 7.3 mW, 51 A, Single N−Channel
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• NVTFS5C466NLWF − Wettable Flanks Product
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
40
V
Gate−to−Source Voltage
V_GS
±20
V
Continuous Drain Cur-
T_C = 25°C
I_D
rent R_qJC (Notes 1, 2,
3, 4)
Steady ^{TC = 100°C}
Power Dissipation
State _{TC = 25°C}
P_D
R_qJC (Notes 1, 2, 3)
T_C = 100°C
51
A
36
38
W
19
Continuous Drain Cur-
T_A = 25°C
I_D
rent R_qJA (Notes 1 &
3, 4)
Steady ^{TA = 100°C}
Power Dissipation
R_qJA (Notes 1, 3)
State _{TA = 25°C}
P_D
T_A = 100°C
14
A
12
3.1
W
2.1
Pulsed Drain Current T_A = 25°C, t_p = 10 ms
I_DM
200
A
Operating Junction and Storage Temperature
T_J, T_stg −55 to °C
+175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (I_L(pk) = 3 A)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_S
10
A
E_AS
72
mJ
T_L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
Junction−to−Case − Steady State (Note 3)
R_qJC
3.5 °C/W
Junction−to−Ambient − Steady State (Note 3)
R_qJA
48
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm², 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
www.onsemi.com
V_(BR)DSS
40 V
R_DS(on) MAX
7.3 mW @ 10 V
12 mW @ 4.5 V
I_D MAX
51 A
N−Channel
D (5 − 8)
G (4)
S (1, 2, 3)
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
S
D
S
XXXX
D
S AYWWG D
G
G
D
XXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
January, 2017 − Rev. 0
Publication Order Number:
NVTFS5C466NL/D