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NVTFS5820NL Datasheet, PDF (1/6 Pages) ON Semiconductor – 150 mA, Ultra Low Supply Current, Low Dropout Regulator | |||
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NVTFS5820NL
Power MOSFET
60 V, 11.5 mW, Single NâChannel, m8FL
Features
⢠Small Footprint (3.3x3.3 mm) for Compact Design
⢠Low RDS(on) to Minimize Conduction Losses
⢠Low QG and Capacitance to Minimize Driver Losses
⢠AECâQ101 Qualified
⢠These are PbâFree Devices*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
VDSS
60
V
GateâtoâSource Voltage
VGS
"20 V
Continuous Drain Cur-
Tmb = 25°C
ID
rent RYJâmb (Notes 1,
2, 3, 4)
Steady Tmb = 100°C
Power Dissipation
State Tmb = 25°C
PD
RYJâmb (Notes 1, 2, 3)
Tmb = 100°C
29
A
20
21
W
10
Continuous Drain Cur-
TA = 25°C
ID
rent RqJA (Notes 1 &
3, 4)
Steady TA = 100°C
Power Dissipation
RqJA (Notes 1, 3)
State TA = 25°C
PD
TA = 100°C
11
A
8.0
3.2
W
1.6
Pulsed Drain Current TA = 25°C, tp = 10 ms
IDM
247
A
Current limited by package
(Note 4)
TA = 25°C IDmaxPkg
70
A
Operating Junction and Storage Temperature
TJ, Tstg â 55 to °C
175
Source Current (Body Diode)
Single Pulse DrainâtoâSource Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 37 A, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8â³ from case for 10 s)
IS
17
A
EAS
48
mJ
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
JunctionâtoâMounting Board (top) â Steady
State (Note 2, 3)
RYJâmb
7.3 °C/W
JunctionâtoâAmbient â Steady State (Note 3) RqJA
47
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51â12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surfaceâmounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
60 V
RDS(on) MAX
11.5 mW @ 10 V
15 mW @ 4.5 V
ID MAX
29 A
NâChannel
D
G
S
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
S
D
S
5820
D
S AYWWG D
G
G
D
5820
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbâFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shippingâ
NVTFS5820NLTAG WDFN8 1500/Tape &
(PbâFree)
Reel
NVTFS5820NLTWG WDFN8 5000/Tape &
(PbâFree)
Reel
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For additional information on our PbâFree strategy and
soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
1
July, 2011 â Rev. 1
Publication Order Number:
NVTFS5820NL/D
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