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NVTFS5811NL_13 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET | |||
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NVTFS5811NL
Power MOSFET
40 V, 6.7 mW, 40 A, Single NâChannel
Features
⢠Small Footprint (3.3 x 3.3 mm) for Compact Design
⢠Low RDS(on) to Minimize Conduction Losses
⢠Low Capacitance to Minimize Driver Losses
⢠NVTFS5811NLWF â Wettable Flanks Product
⢠AECâQ101 Qualified and PPAP Capable
⢠These Devices are PbâFree and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
VDSS
40
V
GateâtoâSource Voltage
VGS
±20
V
Continuous Drain Cur-
Tmb = 25°C
ID
rent RYJâmb (Notes 1,
2, 3, 4)
Steady Tmb = 100°C
Power Dissipation
State Tmb = 25°C
PD
RYJâmb (Notes 1, 2, 3)
Tmb = 100°C
40
A
28
21
W
10
Continuous Drain Cur-
TA = 25°C
ID
rent RqJA (Notes 1 &
3, 4)
Steady TA = 100°C
Power Dissipation
RqJA (Notes 1, 3)
State TA = 25°C
PD
TA = 100°C
16
A
11
3.2
W
1.6
Pulsed Drain Current TA = 25°C, tp = 10 ms
IDM
354
A
Operating Junction and Storage Temperature
TJ, Tstg â55 to °C
+175
Source Current (Body Diode)
Single Pulse DrainâtoâSource Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 36 A, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8â³ from case for 10 s)
IS
17
A
EAS
65
mJ
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
JunctionâtoâMounting Board (top) â Steady
State (Note 2 and 3)
RYJâmb
7.2 °C/W
JunctionâtoâAmbient â Steady State (Note 3)
RqJA
47
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51â12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surfaceâmounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
40 V
RDS(on) MAX
6.7 mW @ 10 V
10 mW @ 4.5 V
ID MAX
40 A
NâChannel MOSFET
D (5â8)
G (4)
S (1,2,3)
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
S
D
S
XXXX
D
S AYWWG D
G
G
D
XXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbâFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
May, 2013 â Rev. 2
Publication Order Number:
NVTFS5811NL/D
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