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NVTFS5124PL Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET −60 V, −6 A, 260 m, Single P−Channel | |||
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NVTFS5124PL
Power MOSFET
â60 V, â6 A, 260 mW, Single PâChannel
Features
⢠Small Footprint (3.3 x 3.3 mm) for Compact Design
⢠Low RDS(on) to Minimize Conduction Losses
⢠Low QG and Capacitance to Minimize Driver Losses
⢠NVTFS5124PLWF â Wettable Flanks Product
⢠AECâQ101 Qualified and PPAP Capable
⢠These Devices are PbâFree and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
VDSS
â60
V
GateâtoâSource Voltage
VGS
±20
V
Continuous Drain Cur-
Tmb = 25°C
ID
rent RYJâmb (Notes 1,
2, 3, 4)
Steady Tmb = 100°C
Power Dissipation
State Tmb = 25°C
PD
RYJâmb (Notes 1, 2, 3)
Tmb = 100°C
â6.0 A
â4.0
18
W
9.0
Continuous Drain Cur-
TA = 25°C
ID
rent RqJA (Notes 1, 3,
4)
Steady
TA = 100°C
Power Dissipation
RqJA (Notes 1, 3)
State TA = 25°C
PD
TA = 100°C
â2.4 A
â1.7
3.0
W
1.5
Pulsed Drain Current TA = 25°C, tp = 10 ms
IDM
â24
A
Operating Junction and Storage Temperature
TJ, Tstg â55 to °C
+175
Source Current (Body Diode)
IS
Single Pulse DrainâtoâSource Avalanche
EAS
Energy (TJ = 25°C, VDD = â50 V, VGS = â10 V,
IL(pk) = â13 A, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
TL
(1/8â³ from case for 10 s)
â18
A
8.5 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
JunctionâtoâMounting Board (top) â Steady
State (Note 2 and 3)
RYJâmb
8.4 °C/W
JunctionâtoâAmbient â Steady State (Note 3)
RqJA
49.2
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51â12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surfaceâmounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
â60 V
RDS(on) MAX
260 mW @ â10 V
380 mW @ â4.5 V
ID MAX
â6 A
PâChannel MOSFET
D (5â8)
G (4)
1
WDFN8
(m8FL)
CASE 511AB
S (1,2,3)
MARKING DIAGRAM
1
S
D
S
XXXX
D
S AYWWG D
G
G
D
XXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbâFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
May, 2013 â Rev. 2
Publication Order Number:
NVTFS5124PL/D
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