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NVTFS5116PL_14 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET | |||
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NVTFS5116PL
Power MOSFET
â60 V, â14 A, 52 mW, Single PâChannel
Features
⢠Small Footprint (3.3 x 3.3 mm) for Compact Design
⢠Low RDS(on) to Minimize Conduction Losses
⢠Low Capacitance to Minimize Driver Losses
⢠NVTFS5116PLWF â Wettable Flanks Product
⢠AECâQ101 Qualified and PPAP Capable
⢠These Devices are PbâFree and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
VDSS
â60
V
GateâtoâSource Voltage
VGS
±20
V
Continuous Drain Cur-
Tmb = 25°C
ID
rent RYJâmb (Notes 1,
2, 3, 4)
Steady Tmb = 100°C
Power Dissipation
State Tmb = 25°C
PD
RYJâmb (Notes 1, 2, 3)
Tmb = 100°C
â14
A
â10
21
W
10
Continuous Drain Cur-
TA = 25°C
ID
rent RqJA (Notes 1 &
3, 4)
Steady TA = 100°C
Power Dissipation
RqJA (Notes 1, 3)
State TA = 25°C
PD
TA = 100°C
â6
A
â4
3.2
W
1.6
Pulsed Drain Current TA = 25°C, tp = 10 ms
IDM
â126 A
Operating Junction and Storage Temperature
TJ, Tstg â55 to °C
+175
Source Current (Body Diode)
Single Pulse DrainâtoâSource Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 30 A, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8â³ from case for 10 s)
IS
â17
A
EAS
45
mJ
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
JunctionâtoâMounting Board (top) â Steady
State (Note 2 and 3)
RYJâmb
7.2 °C/W
JunctionâtoâAmbient â Steady State (Note 3)
RqJA
47
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51â12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surfaceâmounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
â60 V
RDS(on) MAX
52 mW @ â10 V
72 mW @ â4.5 V
ID MAX
â14 A
PâChannel MOSFET
D (5â8)
G (4)
1
WDFN8
(m8FL)
CASE 511AB
S (1,2,3)
MARKING DIAGRAM
1
S
D
S
XXXX
D
S AYWWG D
G
G
D
XXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbâFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
June, 2014 â Rev. 3
Publication Order Number:
NVTFS5116PL/D
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