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NVTFS5116PL Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET −60 V, −14 A, 52 m, Single P−Channel | |||
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NVTFS5116PL
Power MOSFET
â60 V, â14 A, 52 mW, Single PâChannel
Features
⢠Small Footprint (3.3 x 3.3 mm) for Compact Design
⢠Low RDS(on) to Minimize Conduction Losses
⢠Low Capacitance to Minimize Driver Losses
⢠NV Prefix for Automotive and Other Applications Requiring
AECâQ101 Qualified Site and Change Controls
⢠These are PbâFree Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
VDSS
â60
V
GateâtoâSource Voltage
VGS
±20
V
Continuous Drain Cur-
Tmb = 25°C
ID
rent RYJâmb (Notes 1,
2, 3, 4)
Steady Tmb = 100°C
Power Dissipation
State Tmb = 25°C
PD
RYJâmb (Notes 1, 2, 3)
Tmb = 100°C
â14
A
â10
21
W
10
Continuous Drain Cur-
TA = 25°C
ID
rent RqJA (Notes 1 &
3, 4)
Steady TA = 100°C
Power Dissipation
RqJA (Notes 1, 3)
State TA = 25°C
PD
TA = 100°C
â6
A
â4
3.2
W
1.6
Pulsed Drain Current TA = 25°C, tp = 10 ms
IDM
â126 A
Operating Junction and Storage Temperature
TJ, Tstg â55 to °C
+175
Source Current (Body Diode)
Single Pulse DrainâtoâSource Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 30 A, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8â³ from case for 10 s)
IS
â17
A
EAS
45
mJ
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
JunctionâtoâMounting Board (top) â Steady
State (Note 2 and 3)
RYJâmb
7.2 °C/W
JunctionâtoâAmbient â Steady State (Note 3)
RqJA
47
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51â12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surfaceâmounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
â60 V
RDS(on) MAX
52 mW @ â10 V
72 mW @ â4.5 V
ID MAX
â14 A
PâChannel MOSFET
D (5â8)
G (4)
1
WDFN8
(m8FL)
CASE 511AB
S (1,2,3)
MARKING DIAGRAM
1
S
D
S
5116
D
S AYWWG D
G
G
D
5116
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbâFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shippingâ
NVTFS5116PLTAG WDFN8 1500/Tape & Reel
(PbâFree)
NVTFS5116PLTWG WDFN8 5000/Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
January, 2011 â Rev. 0
Publication Order Number:
NVTFS5116PL/D
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