NVTFS4C25N Datasheet, PDF (1/7 Pages) ON Semiconductor – Power MOSFET

NVTFS4C25N
Power MOSFET
30 V, 17 mW, 22 A, Single N−Channel, m8FL
Features
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• NVTFS4C25NWF − Wettable Flanks Product
• NVT Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R_qJA
(Notes 1, 3, 5)
Power Dissipation R_qJA
(Notes 1, 3, 5)
Steady
State
T_A = 25°C
T_A = 85°C
T_A = 25°C
T_A = 85°C
Continuous Drain
Current R_yJC
(Notes 1, 2, 4, 5)
Power Dissipation
R_yJC (Notes 1, 2, 4, 5)
Steady
State
T_C = 25°C
T_C = 85°C
T_C = 25°C
T_C = 85°C
Pulsed Drain Current
T_A = 25°C, t_p = 10 ms
Operating Junction and Storage Temperature
V_DSS
V_GS
I_D
P_D
I_D
P_D
I_DM
T_J,
T_stg
30
V
±20 V
10.1 A
7.8
3.0 W
1.8
22.1 A
17.1
14.3 W
8.6
90
A
−55 to °C
+175
Source Current (Body Diode)
I_S
14
A
Single Pulse Drain−to−Source Avalanche Energy
E_AS
11.2 mJ
(T_J = 25°C, I_L = 6.7 A_pk, L = 0.5 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T_L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The entire application environment impacts the thermal resistance values
shown; they are not constants and are valid for the specific conditions noted.
2. Psi (y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to a single case surface.
3. Surface−mounted on FR4 board using 650 mm², 2 oz. Cu Pad.
4. Assumes heat−sink sufficiently large to maintain constant case temperature
independent of device power.
5. Continuous DC current rating. Maximum current for pulses as long as one
second is higher but dependent on pulse duration and duty cycle.
http://onsemi.com
V_(BR)DSS
30 V
R_DS(on) MAX
17 mW @ 10 V
26.5 mW @ 4.5 V
I_D MAX
22 A
N−Channel MOSFET
D (5−8)
G (4)
S (1,2,3)
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
S
D
S
XXXX
D
S AYWWG D
G
G
D
XXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
April, 2014 − Rev. 1
Publication Order Number:
NVTFS4C25N/D