NVTFS4C10N Datasheet, PDF (1/6 Pages) ON Semiconductor – Single N-Channel Power MOSFET

NVTFS4C10N
Power MOSFET
30 V, 7.4 mW, 47 A, Single N−Channel,
m8FL
Features
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• NVTFS4C10NWF − Wettable Flanks Product
• NVT Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_J = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R_qJA
(Notes 1, 2, 4)
V_DSS
30
V
V_GS
±20 V
T_A = 25°C
I_D
15.3 A
T_A = 100°C
10.8
Power Dissipation R_qJA
T_A = 25°C
P_D
(Notes 1, 2, 4)
Steady ^TA ^{= 100°C}
Continuous Drain
Current R_yJC
(Notes 1, 3, 4)
State _{TC = 25°C}
I_D
T_C = 100°C
3.0 W
1.5
47
A
33
Power Dissipation
R_yJC (Notes 1, 3, 4)
T_C = 25°C
P_D
T_C = 100°C
28 W
14 W
Pulsed Drain Current
T_A = 25°C, t_p = 10 ms
I_DM
196 A
Operating Junction and Storage Temperature
T_J, −55 to °C
T_stg
+175
Source Current (Body Diode)
I_S
53
A
Single Pulse Drain−to−Source Avalanche Energy
E_AS
(T_J = 25°C, V_GS = 10 V, I_L = 10.2 A, L = 0.5 mH)
26 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T_L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case (Drain) (Notes 1, 3)
Junction−to−Ambient – Steady State
(Notes 1, 2)
R_yJC
R_qJA
5.4
50
°C/W
1. The entire application environment impacts the thermal resistance values
shown; they are not constants and are valid for the specific conditions noted.
2. Surface−mounted on FR4 board using 650 mm², 2 oz. Cu Pad.
3. Assumes heat−sink sufficiently large to maintain constant case temperature
independent of device power.
4. Continuous DC current rating. Maximum current for pulses as long as one
second is higher but dependent on pulse duration and duty cycle.
http://onsemi.com
V_(BR)DSS
30 V
R_DS(on) MAX
7.4 mW @ 10 V
11 mW @ 4.5 V
I_D MAX
47 A
N−Channel MOSFET
D (5−8)
G (4)
S (1,2,3)
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
S
D
S
XXXX
D
S AYWWG D
G
G
D
4C10
10WF
A
Y
WW
G
= Specific Device Code for
NVMTS4C10N
= Specific Device Code of
NVTFS4C10NWF
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
July, 2014 − Rev. 2
Publication Order Number:
NVTFS4C10N/D