NVTFS4823N Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET 30 V, 10.5 m, 30 A, Single N−Channel

NVTFS4823N
Power MOSFET
30 V, 10.5 mW, 30 A, Single N−Channel
Features
• Small Footprint (3.3x3.3 mm) for Compact Design
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• NV Prefix for Automotive and Other Applications Requiring
AEC−Q101 Qualified Site and Change Controls
• These are Pb−Free Devices
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
30
V
Gate−to−Source Voltage
V_GS
"20 V
Continuous Drain Cur-
T_mb = 25°C
I_D
rent R_YJ−mb (Notes 1,
2, 3, 4)
Steady ^{Tmb = 100°C}
Power Dissipation
State _{Tmb = 25°C}
P_D
R_YJ−mb (Notes 1, 2, 3)
T_mb = 100°C
30
A
21
21
W
11
Continuous Drain Cur-
T_A = 25°C
I_D
rent R_qJA (Notes 1, 3,
& 4)
Steady
T_A = 100°C
Power Dissipation
R_qJA (Notes 1, 3)
State _{TA = 25°C}
P_D
T_A = 100°C
13
A
9.0
3.1
W
1.6
Pulsed Drain Current T_A = 25°C, t_p = 10 ms
I_DM
198
A
Operating Junction and Storage Temperature
T_J, T_stg − 55 to °C
175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T_J = 25°C, V_DD = 24 V, V_GS = 10 V,
I_L(pk) = 24 A, L = 0.1 mH, R_G = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_S
19
A
E_AS
28.8 mJ
T_L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
Junction−to−Mounting Board (top) − Steady
State (Note 2, 3)
R_YJ−mb
7.0 °C/W
Junction−to−Ambient − Steady State (Note 3) R_qJA
47
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm², 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
http://onsemi.com
V_(BR)DSS
30 V
R_DS(on) MAX
10.5 mW @ 10 V
17.5 mW @ 4.5 V
I_D MAX
30 A
N−Channel
D (5 − 8)
G (4)
S (1, 2, 3)
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
S
D
S
4823
D
S AYWWG D
G
G
D
4823
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NVTFS4823NTAG WDFN8 1500/Tape & Reel
(Pb−Free)
NVTFS4823NTWG WDFN8 5000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
January, 2011 − Rev. 0
Publication Order Number:
NVTFS4823N/D