NVR4003NT3G Datasheet, PDF (1/5 Pages) ON Semiconductor – Small Signal MOSFET 30 V, 0.56 A, Single N−Channel, SOT−23

NTR4003N, NVR4003N
Small Signal MOSFET
30 V, 0.56 A, Single N−Channel, SOT−23
Features
• Low Gate Voltage Threshold (V_GS(TH)) to Facilitate Drive Circuit
Design
• Low Gate Charge for Fast Switching
• ESD Protected Gate
• SOT−23 Package Provides Excellent Thermal Performance
• Minimum Breakdown Voltage Rating of 30 V
• NVR Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Notebooks:
♦ Level Shifters
♦ Logic Switches
♦ Low Side Load Switches
• Portable Applications
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
30
V
Gate−to−Source Voltage
V_GS
±20
V
Continuous Drain
Current (Note 1)
Steady T_A = 25°C
I_D
State
T_A = 85°C
0.5
A
0.37
Power Dissipation
(Note 1)
Steady State
P_D
0.69 W
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
t < 10 s T_A = 25°C
I_D
T_A = 85°C
t<5s
P_D
0.56 A
0.40
0.83 W
Pulsed Drain Current
t_p = 10 ms
Operating Junction and Storage Temperature
I_DM
1.7
A
T_J,
−55 to °C
Tstg
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I_S
1.0
A
T_L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1)
R_qJA
180 °C/W
Junction−to−Ambient − t < 10 s (Note 1)
R_qJA
150
Junction−to−Ambient − Steady State (Note 2)
R_qJA
300
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V_(BR)DSS
30 V
R_DS(on) TYP
1.0 W @ 4.0 V
1.5 W @ 2.5 V
I_D MAX
0.56 A
N−Channel
3
1
2
MARKING DIAGRAM/
PIN ASSIGNMENT
3
3
Drain
1
2
SOT−23
CASE 318
STYLE 21
TR8 M G
G
1
Gate
2
Source
TR8 = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
NTR4003NT1G SOT−23
(Pb−Free)
NTR4003NT3G SOT−23
(Pb−Free)
NVR4003NT3G SOT−23
(Pb−Free)
3000 / Tape & Reel
10,000 / Tape &
Reel
10,000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
1
June, 2012 − Rev. 3
Publication Order Number:
NTR4003N/D