NVMFS6B75NL Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET

NVMFS6B75NL
Power MOSFET
100 V, 30 mW, 28 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R_DS(on) to Minimize Conduction Losses
• Low Q_G and Capacitance to Minimize Driver Losses
• NVMFS6B75NLWF − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
100
V
Gate−to−Source Voltage
V_GS
±16
V
Continuous Drain
Current R_qJC
(Notes 1, 2, 3)
Power Dissipation
R_qJC (Notes 1, 2)
T_C = 25°C
I_D
Steady ^{TC = 100°C}
State _{TC = 25°C}
P_D
T_C = 100°C
28
A
19.7
56
W
28
Continuous Drain
Current R_qJA
(Notes 1, 2, 3)
Power Dissipation
R_qJA (Notes 1 & 2)
T_A = 25°C
I_D
Steady ^{TA = 100°C}
State _{TA = 25°C}
P_D
T_A = 100°C
7.0
A
5.0
3.5
W
1.75
Pulsed Drain Current T_A = 25°C, t_p = 10 ms
I_DM
141
A
Operating Junction and Storage Temperature
T_J, T_stg − 55 to °C
+ 175
Source Current (Body Diode)
I_S
43
A
Single Pulse Drain−to−Source Avalanche
Energy (I_L(pk) = 1.7 A)
E_AS
177 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T_L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
R_qJC
2.7 °C/W
Junction−to−Ambient − Steady State (Note 2) R_qJA
43
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm², 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
www.onsemi.com
V_(BR)DSS
100 V
R_DS(ON) MAX
30 mW @ 10 V
46 mW @ 4.5 V
I_D MAX
28 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
D
S 6B75xx
S AYWZZ
G
D
D
6B75NL = NVMFS6B75NL
6B75LW = NVMFS6B75NLWF
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
August, 2016 − Rev. 0
Publication Order Number:
NVMFS6B75NL/D