NVMFS6B03NL_16 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET

NVMFS6B03NL
Power MOSFET
100 V, 4 mW, 145 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R_DS(on) to Minimize Conduction Losses
• Low Q_G and Capacitance to Minimize Driver Losses
• NVMFS6B03NLWF − Wettable Flank Option for Enhanced Optical
Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
100
V
Gate−to−Source Voltage
V_GS
±16
V
Continuous Drain
Current R_qJC
(Notes 1, 3)
Power Dissipation
R_qJC (Note 1)
T_C = 25°C
I_D
Steady ^{TC = 100°C}
State _{TC = 25°C}
P_D
T_C = 100°C
145
A
102
198 W
99
Continuous Drain
Current R_qJA
(Notes 1, 2, 3)
Power Dissipation
R_qJA (Notes 1 & 2)
T_A = 25°C
I_D
Steady ^{TA = 100°C}
State _{TA = 25°C}
P_D
T_A = 100°C
20
A
14
3.9
W
2.0
Pulsed Drain Current T_A = 25°C, t_p = 10 ms
I_DM
520
A
Operating Junction and Storage Temperature
T_J, T_stg − 55 to °C
+ 175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (I_L(pk) = 60 A)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_S
160
A
E_AS
180 mJ
T_L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
R_qJC
0.76 °C/W
Junction−to−Ambient − Steady State (Note 2) R_qJA
38
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm², 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
www.onsemi.com
V_(BR)DSS
100 V
R_DS(ON) MAX
4 mW @ 10 V
6 mW @ 4.5 V
I_D MAX
145 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
D
S XXXXXX
S AYWZZ
G
D
D
XXXXXX = 6B03NL (NVMFS6B03NL) or
XXXXXX = 6B03LW (NVMFS6B03NLWF)
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
January, 2016 − Rev. 0
Publication Order Number:
NVMFS6B03NL/D