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NVMFS5C430NL_17 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET | |||
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NVMFS5C430NL
Power MOSFET
40 V, 1.4 mW, 200 A, Single NâChannel
Features
⢠Small Footprint (5x6 mm) for Compact Design
⢠Low RDS(on) to Minimize Conduction Losses
⢠Low QG and Capacitance to Minimize Driver Losses
⢠NVMFS5C430NLWF â Wettable Flank Option for Enhanced Optical
Inspection
⢠AECâQ101 Qualified and PPAP Capable
⢠These Devices are PbâFree and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
VDSS
40
V
GateâtoâSource Voltage
VGS
±20
V
Continuous Drain
Current RqJC
(Notes 1, 3)
Power Dissipation
RqJC (Note 1)
TC = 25°C
ID
Steady TC = 100°C
State TC = 25°C
PD
TC = 100°C
200
A
140
110 W
53
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Power Dissipation
RqJA (Notes 1 & 2)
TA = 25°C
ID
Steady TA = 100°C
State TA = 25°C
PD
TA = 100°C
38
A
27
3.8
W
1.9
Pulsed Drain Current TA = 25°C, tp = 10 ms
IDM
900
A
Operating Junction and Storage Temperature
TJ, Tstg â 55 to °C
+ 175
Source Current (Body Diode)
Single Pulse DrainâtoâSource Avalanche
Energy (IL(pk) = 15 A)
Single Pulse DrainâtoâSource Voltage
(tp = 10 ms)
Lead Temperature for Soldering Purposes
(1/8â³ from case for 10 s)
IS
EAS
VDSM
TL
120
A
493 mJ
48
V
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctionâtoâCase â Steady State
RqJC
1.4 °C/W
JunctionâtoâAmbient â Steady State (Note 2) RqJA
40
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surfaceâmounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
www.onsemi.com
V(BR)DSS
40 V
RDS(ON) MAX
1.4 mW @ 10 V
2.2 mW @ 4.5 V
ID MAX
200 A
D (5,6)
G (4)
S (1,2,3)
NâCHANNEL MOSFET
1
DFN5
(SOâ8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
D
S XXXXXX
S AYWZZ
G
D
D
XXXXXX = 5C430L
XXXXXX = (NVMFS5C430NL) or
XXXXXX = 430LWF
XXXXXX = (NVMFS5C430NLWF)
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
February, 2017 â Rev. 3
Publication Order Number:
NVMFS5C430NL/D
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