NVMFS5885NL Datasheet, PDF (1/6 Pages) ON Semiconductor – Single N−Channel Power MOSFET

NVMFS5885NL
Power MOSFET
60 V, 15 mW, 39 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R_DS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• NVMFS5885NLWF − Wettable Flanks Product
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
60
V
Gate−to−Source Voltage
V_GS
"20 V
Continuous Drain Cur-
T_mb = 25°C
I_D
rent R_YJ−mb (Notes 1,
2, 3)
Steady ^{Tmb = 100°C}
Power Dissipation
State _{Tmb = 25°C}
P_D
R_YJ−mb (Notes 1, 2, 3)
T_mb = 100°C
39
A
28
54
W
27
Continuous Drain Cur-
T_A = 25°C
I_D
rent R_qJA (Notes 1 &
3)
Steady ^{TA = 100°C}
Power Dissipation
R_qJA (Notes 1 & 3)
State _{TA = 25°C}
P_D
T_A = 100°C
10.2 A
7.2
3.7
W
1.8
Pulsed Drain Current T_A = 25°C, t_p = 10 ms
I_DM
179
A
Operating Junction and Storage Temperature
T_J, T_stg − 55 to °C
175
Source Current (Body Diode)
I_S
46
A
Single Pulse Drain−to−Source Avalanche
Energy (T_J = 25°C, V_DD = 50 V, V_GS = 10 V,
I_L(pk) = 18 A, L = 0.3 mH, R_G = 25 W)
E_AS
49
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T_L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Mounting Board (top) − Steady
State (Notes 2, 3)
R_YJ−mb
2.8 °C/W
Junction−to−Ambient − Steady State (Note 3) R_qJA
41
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm², 2 oz. Cu pad.
http://onsemi.com
V_(BR)DSS
60 V
R_DS(ON) MAX
15 mW @ 10 V
21 mW @ 4.5 V
I_D MAX
39 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
D
S XXXXXX
S AYWZZ
G
D
D
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
May, 2013 − Rev. 3
Publication Order Number:
NVMFS5885NL/D