NVMFS5833N Datasheet, PDF (1/6 Pages) ON Semiconductor – Single N−Channel Power MOSFET

NVMFS5833N
Power MOSFET
40 V, 7.5 mW, 86 A, Single N−Channel,
SO−8FL
Features
• Low R_DS(on)
• Low Capacitance
• Optimized Gate Charge
• AEC−Q101 Qualified and PPAP Capable
• NVMFS5833NWF − Wettable Franks Option for Enhanced Optical
Inspection
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
40
V
Gate−to−Source Voltage
V_GS
"20 V
Continuous Drain Cur-
T_mb = 25°C
I_D
rent R_YJ−mb
(Notes 1, 2, 3 & 4)
Steady ^{Tmb = 100°C}
Power Dissipation
State _{Tmb = 25°C}
P_D
R_YJ−mb (Notes 1, 2, 3)
T_mb = 100°C
86
A
61
112 W
56
Continuous Drain Cur-
T_A = 25°C
I_D
rent R_qJA
(Notes 1, 3 & 4)
Steady ^{TA = 100°C}
Power Dissipation
R_qJA (Notes 1 & 3)
State _{TA = 25°C}
P_D
T_A = 100°C
16
A
11
3.7
W
1.8
Pulsed Drain Current T_A = 25°C, t_p = 10 ms
I_DM
324
A
Operating Junction and Storage Temperature
T_J, T_stg − 55 to °C
175
Source Current (Body Diode)
I_S
86
A
Single Pulse Drain−to−Source Avalanche
E_AS
65
mJ
Energy (T_J = 25°C, I_L(pk) = 36 A, L = 0.1 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T_L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Mounting Board (top) − Steady
State (Notes 2, 3)
R_YJ−mb
1.3 °C/W
Junction−to−Ambient − Steady State (Note 3) R_qJA
41
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm², 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as
1 second are higher but are dependent on pulse duration and duty cycle/
http://onsemi.com
V_(BR)DSS
40 V
R_DS(ON) MAX
7.5 mW @ 10 V
I_D MAX
86 A
D (5)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING DIAGRAM
D
S
D
S 5833xx
S AYWZZ
G
D
D
5833
xx
A
Y
W
ZZ
= Specific Device Code
= N (NVMFS5833N) or
= WF (NVMFS5833NWF)
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
NVMFS5833NT1G
Package
SO−8FL
(Pb−Free)
Shipping^†
1500 /
Tape & Reel
NVMFS5833NT3G
SO−8FL
5000 /
(Pb−Free) Tape & Reel
NVMFS5833NWFT1G SO−8FL
1500 /
(Pb−Free) Tape & Reel
NVMFS5833NWFT3G SO−8FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
September, 2014 − Rev. 1
Publication Order Number:
NVMFS5833N/D