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NVMFS5832NL_13 Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET 40 V, 4.2 m, 120 A, Single N.Channel | |||
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NVMFS5832NL
Power MOSFET
40 V, 4.2 mW, 120 A, Single NâChannel
Features
⢠Small Footprint (5x6 mm) for Compact Design
⢠Low RDS(on) to Minimize Conduction Losses
⢠Low QG and Capacitance to Minimize Driver Losses
⢠AECâQ101 Qualified and PPAP Capable
⢠These are PbâFree Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
DrainâtoâSource Voltage
VDSS
40
V
GateâtoâSource Voltage
VGS
± 20 V
Continuous Drain Cur-
Tmb = 25°C
ID
rent RYJâmb (Notes 1,
2, 3, 4)
Steady Tmb = 100°C
Power Dissipation
State Tmb = 25°C
PD
RYJâmb (Notes 1, 2, 3)
Tmb = 100°C
120
A
84
127 W
64
Continuous Drain Cur-
TA = 25°C
ID
rent RqJA (Notes 1, 3,
4)
Steady
TA = 100°C
Power Dissipation
RqJA (Notes 1 & 3)
State TA = 25°C
PD
TA = 100°C
21
A
15
3.7
W
1.9
Pulsed Drain Current TA = 25°C, tp = 10 ms
IDM
557
A
Operating Junction and Storage Temperature
TJ, Tstg â 55 to °C
+ 175
Source Current (Body Diode)
Single Pulse DrainâtoâSource Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL(pk) = 52 A,
L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8â³ from case for 10 s)
IS
120
A
EAS
134 mJ
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctionâtoâMounting Board (top) â Steady
State (Notes 2, 3)
RYJâmb
1.2 °C/W
JunctionâtoâAmbient â Steady State (Note 3) RqJA
40
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51â12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surfaceâmounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
40 V
RDS(ON) MAX
4.2 mW @ 10 V
6.5 mW @ 4.5 V
ID MAX
120 A
D (5,6)
G (4)
S (1,2,3)
NâCHANNEL MOSFET
1
SOâ8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
D
S V5832L
S AYWZZ
G
D
D
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
Device
Package
NVMFS5832NLT1G SOâ8FL
(PbâFree)
Shippingâ
1500 /
Tape & Reel
NVMFS5832NLT3G SOâ8FL
(PbâFree)
5000 /
Tape & Reel
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
March, 2013 â Rev. 2
Publication Order Number:
NVMFS5832NL/D
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