NVMFS5830NL Datasheet, PDF (1/6 Pages) ON Semiconductor – 40 V, 2.3 m, 185 A, Single N−Channel

NVMFS5830NL
Power MOSFET
40 V, 2.3 mW, 185 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low R_DS(on) to Minimize Conduction Losses
• Low Q_G and Capacitance to Minimize Driver Losses
• AEC−Q101 Qualified and PPAP Capable
• These are Pb−Free Devices*
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
40
V
Gate−to−Source Voltage
V_GS
± 20 V
Continuous Drain Cur-
T_mb = 25°C
I_D
rent R_YJ−mb (Notes 1,
2, 3, 4)
Steady ^{Tmb = 100°C}
Power Dissipation
State _{Tmb = 25°C}
P_D
R_YJ−mb (Notes 1, 2, 3)
T_mb = 100°C
185
A
131
158 W
79
Continuous Drain Cur-
T_A = 25°C
I_D
rent R_qJA (Notes 1, 3,
4)
Steady
T_A = 100°C
Power Dissipation
R_qJA (Notes 1 & 3)
State _{TA = 25°C}
P_D
T_A = 100°C
29
A
20
3.8
W
1.9
Pulsed Drain Current T_A = 25°C, t_p = 10 ms
I_DM
1012 A
Operating Junction and Storage Temperature
T_J, T_stg − 55 to °C
+ 175
Source Current (Body Diode)
I_S
185
A
Single Pulse Drain−to−Source Avalanche
E_AS
Energy (T_J = 25°C, V_GS = 10 V, I_L(pk) = 85 A, L
= 0.1 mH, R_G = 25 W)
361 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T_L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Mounting Board (top) − Steady
State (Notes 2, 3)
R_YJ−mb
1.0 °C/W
Junction−to−Ambient − Steady State (Note 3) R_qJA
39
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm², 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
http://onsemi.com
V_(BR)DSS
40 V
R_DS(ON) MAX
2.3 mW @ 10 V
3.6 mW @ 4.5 V
I_D MAX
185 A
D (5,6)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
D
S ^V5830L
S ^AYWZZ
G
D
D
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
Device
Package
NVMFS5830NLT1G SO−8FL
(Pb−Free)
Shipping^†
1500 /
Tape & Reel
NVMFS5830NLT3G SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
1
May, 2012 − Rev. 0
Publication Order Number:
NVMFS5830NL/D