NVMFS5113PL Datasheet, PDF (1/6 Pages) ON Semiconductor – Power MOSFET

NVMFS5113PL
Power MOSFET
−60 V, 14 mW, −64 A, Single P−Channel
Features
• Low R_DS(on) to Minimize Conduction Losses
• High Current Capability
• Avalanche Energy Specified
• NVMFS5113PLWF − Wettable Flanks Product
• NVM Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
−60
V
Gate−to−Source Voltage
V_GS
"20 V
Continuous Drain Cur-
T_C = 25°C
I_D
rent R_qJC (Notes 1, 2, 3) _{Steady TC = 100°C}
Power Dissipation R_qJC ^State T_C = 25°C
P_D
(Notes 1, 2)
T_C = 100°C
−64
A
−45
150 W
75
Continuous Drain Cur-
T_A = 25°C
I_D
rent R_qJA (Notes 1, 2, 3) _{Steady TA = 100°C}
Power Dissipation R_qJA ^State T_A = 25°C
P_D
(Notes 1, 2)
T_A = 100°C
−10
A
−7
3.8
W
1.9
Pulsed Drain Current T_A = 25°C, t_p = 10 ms I_DM
−415 A
Operating Junction and Storage Temperature
T_J, T_stg − 55 to °C
175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T_J = 25°C, V_DD = 50 V, V_GS = 10 V,
I_L(pk) = 46 A, L = 0.3 mH, R_G = 25 W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
I_S
−150 A
E_AS
315 mJ
T_L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State (Drain)
(Note 2)
R_qJC
1.0 °C/W
Junction−to−Ambient − Steady State (Note 2) R_qJA
39 °C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm², 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as
1 second is higher but is dependent on pulse duration and duty cycle.
www.onsemi.com
V_(BR)DSS
−60 V
R_DS(on)
14 mW @ −10 V
22 mW @ −4.5 V
I_D
−64 A
S (1, 2, 3)
G (4)
P−Channel
D (5, 6)
1
DFN5
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
D
S ^XXXXXX
S ^AYWZZ
G
D
D
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
November, 2015 − Rev. 3
Publication Order Number:
NVMFS5113PL/D